BFU550WX دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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BFU550W
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حجم فایل
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303.777
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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22
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
NXP Semicon BFU550WX
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Transistor Type:
NPN
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Operating Temperature:
-40°C~+150°C@(Tj)
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Collector Current (Ic):
15mA
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Power Dissipation (Pd):
450mW
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Transition Frequency (fT):
11GHz
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DC Current Gain (hFE@Ic,Vce):
95@15mA,8V
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Collector Cut-Off Current (Icbo):
1nA
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Collector-Emitter Breakdown Voltage (Vceo):
12V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
-
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Package:
SOT-23-6
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Manufacturer:
NXP Semicon
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Series:
Automotive, AEC-Q101
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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Voltage - Collector Emitter Breakdown (Max):
12V
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Frequency - Transition:
11GHz
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Noise Figure (dB Typ @ f):
0.6dB @ 900MHz
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Gain:
18dB
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Power - Max:
450mW
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DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 15mA, 8V
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Current - Collector (Ic) (Max):
50mA
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Mounting Type:
Surface Mount
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Package / Case:
SC-70, SOT-323
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Supplier Device Package:
SOT-323-3
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Base Part Number:
BFU55
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detail:
RF Transistor NPN 12V 50mA 11GHz 450mW Surface Mount SOT-323-3
